[18p-PB1-1~84] 10 スピントロニクス・マグネティクス（ポスター）

▲ [18p-PB1-80] Inverse tunneling magnetoresistance in Fe₃O₄/MgO/Fe epitaxial magnetic tunnel junction

〇Shoma Yasui¹、Jun Okabayashi²、Toshihiro Shimada¹、Takashi Yanase¹、Taro Nagahama¹ (1.Hokkaido Univ.、2.Tokyo Univ.)

キーワード：spintronics, Magnetic tunnel junction(MTJ)

Since the spin polarization of Fe₃O₄ is predicted as -100% theoretically, it is expected to obtain very large TMR ratio in the magnetic tunnel junction (MTJ) with Fe₃O₄ electrodes. However, the TMR ratio is still small value in previous research. It is considered that one possible cause is the insufficient understandings of the interface magnetism between Fe₃O₄ and barrier layer. In this study, we investigated epitaxial growth and interface state with various crystal orientations, and then fabricated MTJs using Fe₃O₄ electrode.