16:00 〜 18:00
▲ [18p-PB2-4] FT-IR Study on Chemical Bonds of Low-Temperature Si Oxide Films Preserved in Various Conditions
キーワード：silicon oxide, low-temperature, FT-IR
To fabricate poly-Si TFT (Thin-Film Transistor) on non-heat resistant materials, our laboratory has been developing the low-temperature deposition method for Si oxide film using APCVD (Atmospheric Pressure Chemical Vapor Deposition) with silicon oil and ozone gas. This method is low cost using safety materials, compared with the conventional CVD methods using plasma and TEOS gas. However, perfectly removing OH bonds in deposited films is still desired because they degrade insulator property. Recently, we found that some dehydration phenomenon occurred when as-deposited films were preserved in ethanol or low humidity air condition. In this meeting, the results are presented, and the mechanism is discussed to further reduce the Si-OH content.