The 80th JSAP Autumn Meeting 2019

Presentation information

Poster presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-PB4-1~12] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 18, 2019 4:00 PM - 6:00 PM PB4 (PB)

4:00 PM - 6:00 PM

[18p-PB4-11] Characterization of Carrier Recombination Levels in Nitrogen δ-Doped GaAs Superlattices by Two- Wavelength Excited Photoluminescence Method

Kota Nagata1, Kamata Norihiko1, Yagi Syuuhei1, Yaguchi Hiroyuki1 (1.Saitama Univ.)

Keywords:defect level