[18p-PB4-1~12] 15.7 Crystal characterization, impurities and crystal defects

[18p-PB4-9] Evaluation of SiC-SBD by multifunctional scanning probe microscope 3

〇(M1)Keita Nakayama¹, Sho Masuda¹, Nobuo Sato¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

Keywords:power device, scanning probe microscope

In this paper, we report the evaluation of SiC-SBD (Schottky Barrier Diode) by multifunctional scanning probe microscopy (SPM). The device is expected to have an n⁻-layer to maintain the breakdown voltage and a p-layer in the termination structure to achieve a breakdown voltage of 1000 V class.The measurement of the place where this p-layer can be guessed will be carried out and will be announced.