[18p-PB5-1~36] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [18p-PB5-11] Experimental demonstration of n- and p-channel GaN MOSFETs operation for power IC

〇(PC)Trung Huu Nguyen¹、Taoka Noriyuki²、Hisashi Yamada¹、Tokio Takahashi¹、Toshikazu Yamada¹、Shimizu Mitsuaki¹ (1.National Institute of Advanced Industrial Science and Technology -Japan (AIST)、2.Grad. Sch. of Engineering, Nagoya Univ)

キーワード：n-and p- channel GaN-MOSFETs, electron mobility, hole mobility

We report on the systematic demonstrations of the depletion-mode p-channel and enhancement-mode n-channel GaN metal-oxide field-effect transistors (MOSFETs) based on homoepitaxial p-GaN substrates. The world’s first depletion-mode p-channel GaN-MOSFET fabricated in this work shows a good I_on/I_off characteristic (~10⁴) and an effective channel hole mobility of approximately 0.2 cm²/V·s at room temperature. For the first time, it is proved that the p-channel GaN-MOSFETs can work independently without the necessity of two-dimension hole gas (2DHG) sources of heterostructures. Meanwhile, the maximum effective electron mobility of n-channel GaN-MOSFETs is approximately 105 cm²/V·s. The post deposition annealing (PDA) treatment of Al₂O₃ dielectrics is also verified in both n and p-channel GaN-MOSFETs and 700^oC is found to be the optimized condition on improving the effective hole/electron mobility. The findings in this work provide a valuable information in the design of novel power electronics taking advantage of p-type doped GaN.