The 80th JSAP Autumn Meeting 2019

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Poster presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 18, 2019 4:00 PM - 6:00 PM PB5 (PB)

4:00 PM - 6:00 PM

[18p-PB5-2] Fabrication of α-Ir2O3 thin film using O3 gas by mist CVD

〇Yasuhisa Masuda1, Kentaro Kaneko1, Takashi Shinohe2, Shizuo Fujita1 (1.Graduate School of Eng., Kyoto Univ., 2.FLOSFIA INC.)

Keywords:iridium oxide