[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-22] Characterization of Sheet Resistances and Thin-Film Transistors with Bilayer Films of Al-doped ZnO by Solution Coating Method

〇Kazuyori Oura¹, Keisuke Takano¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.NMRC Osaka Inst.)

Keywords:AZO, solution method, bi-layer

In recent years, oxide semiconductor TFTs have attracted attention as a substitute material for a-Si TFTs used so far. Its features include high electron mobility and low leakage current in the amorphous phase. Among various manufacturing processes, the solution process can form a low-cost, large-area device, and has excellent composition controllability of the solution. In this study, we evaluated the properties of the layered structure of ZnO-based channel layer and high Al-doped AZO buffer layer, and report the results.