[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [18p-PB5-35] Nanogap Electrode-based Oxygen Sensor using Ultrathin Solution-processed Ceria

〇Tue Trong Phan¹, Tsubasa Tosa¹, Yutaka Majima¹ (1.Tokyo Institute of Technology)

Keywords:gas sensor, nanogap electrode, ceria thin-film

Oxygen gas sensor plays a critical role in many branches of human activity and technological processes. In this work, we report the developement of a novel nanogap electrode-based oxygen sensor using ultrathin solution-processed ceria film. By controlling ceria raw precursor and processing conditions, it was able to form highly uniform 5-nm-thick ceria film over the 25-nm-wide nanogap electrode. Dependence of the sensor’s responses on the temperature and oxygen partial pressure was investigated. Preliminary results showed that the working temperature could be lower than 300 ^oC. Further, the sensing mechanism is associated with formation of oxygen vacancies upon the oxygen partial pressure.