[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-6] Structural properties of α - (Al_x Ga_1-x)₂O₃ thin films prepared by Mist CVD method

〇(B)Ayumu Hashimoto¹, Yuji Nakabayashi², Takeshi Kawae³, Satoru Yamada¹ (1.NITIC, 2.JAIST, 3.Kanazawa Univ.)

Keywords:gallium oxide, mist-CVD