[19a-B11-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[19a-B11-7] Temperature dependence of charge pumping EDMR signal on silicon MOS interfaces

〇Masahiro Hori¹, Toshiaki Tsuchiya¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:interface defect, charge pumping, EDMR