[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

[19a-E301-2] Demonstration of 1200 V vertical GaN planar MOSFET fabricated by all ion implantation process

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Yuta Fukushima¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

Keywords:Gallium Nitride, Ion implantation, MOSFET

We report the characteristics of vertical GaN planar MOSFET formed by all ion implantation process. The active region had a microstructure with a channel length of 1 um and a cell pitch of 5 um, and was formed by Mg ion implantation (I/I) into the p-well region, Si I/I into the source region, and O I/I into the JFET region. The fabricated MOSFET showed the normal MOS channel behaviors. The on-resistance was 2.78 mΩ cm², the threshold voltage was about 2.5 V, and the breakdown voltage was about 1200 V. Thus, it has been demonstrated that the vertical GaN planar MOSFET with low on-resistance and high breakdown voltage can be realized.