Ryo Tanaka

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Speaker, Author, Co-Author

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

[19a-E301-2] Demonstration of 1200 V vertical GaN planar MOSFET fabricated by all ion implantation process

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Yuta Fukushima¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

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