[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

[19a-E301-5] Impact of Low TDD GaN Substrate on On-resistance of Vertical GaN p-n Diodes

〇Hiroshi Ohta¹, Naomi Asai¹, Takehiro Yoshida², Fumimasa Horikiri², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:Low dislocation density GaN substrate, p-n junction diode, On resistance reduction

GaN p-n junction epitaxial layers were grown on a newly developed GaN substrate with a low dislocation density on the entire surface and a conventional GaN substrate by the Void-Assisted Separation (VAS) method. The differences in diode characteristics due to the low dislocation density were evaluated. As a result, the effect of reducing the on-resistance was confirmed.