[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

▲ [19a-E301-6] Improvement of breakdown voltage of GaN-on-GaN p-n Junction Diodes with Shallow Bevel Termination for High Power Applications

〇MACIEJ FRANCISZEK MATYS¹, Takashi Ishida^1,2, Tetsu Kachi¹ (1.Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan, 2.Toyota Motor Corporation, Japan, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan)

Keywords:gallium nitride, breakdown voltage, Vertical Power Devices

One of the major factors limiting the performance of vertical GaN devices, is the electric field crowding at a device edge [1]. Very recently, Maeda et al. [2] showed that this problem can be effectively eliminated in beveled- mesa structures by introducing n and p-layers with comparable doping concentrations [2]. In this work, we propose another approach for reducing electric field crowding in the bevel mesa structures. We show, using two- dimensional TCAD simulations that due to implementation of P-type regions into the bevel mesa structures it is possible to obtain the uniform avalanche effect and thus significant enhancement of the breakdown voltage (BV).
We believe that the proposed novel bevel mesa structure with implemented P-type regions should be promising for high power device applications.
1.T. Kachi Jpn. J. Appl. Phys., 53 (100210-1-10) (2014).
2. Maeda, et al., IEDM Technical Digest, 30.1.1-30.1.4 (2018)