Transient Response of Drain Current after Biasing-Stress in GaN HEMTs on SiC Substrates with Field Plate

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E301 (E301)

Masashi Kato(Nagoya Inst. of Tech.)

11:15 AM - 11:30 AM

〇Qiang Ma¹, Yuji Ando², Shiyo Urano¹, Akio Wakejima¹ (1.Nagoya Inst.of Tech., 2.Nagoya Univ.)

Keywords:Nitride semiconductor