Qiang Ma

→ Search for Qiang Ma in Google Scholar

Speaker, Author, Co-Author

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

11:15 AM - 11:30 AM

▲ [19a-E301-7] Transient Response of Drain Current after Biasing-Stress in GaN HEMTs on SiC Substrates with Field Plate

〇Qiang Ma¹, Yuji Ando², Shiyo Urano¹, Akio Wakejima¹ (1.Nagoya Inst.of Tech., 2.Nagoya Univ.)