Accumulation-Capacitance Characteristics of Metal-Top-Gate/High-k/Sputtered-MoS<sub>2</sub> with Positive Threshold Voltage

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

Thu. Sep 19, 2019 9:30 AM - 11:45 AM E308 (E308)

10:00 AM - 10:15 AM

〇Haruki Tanigawa¹, Kentaro Matsuura¹, Iriya Muneta¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

Keywords:Sputtering, MoS2, C-V