Reduction of Contact Resistance between TiSi<sub>2</sub> and Sputtered-MoS<sub>2</sub> Films by FG anneal

Satoshi Igarashi; Yusuke Mochizuki; Haruki Tanigawa; Masaya Hamada; Kentaro Matsuura; Kuniyuki Kakushima; Kazuo Tsutsui; Hitoshi Wakabayashi

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[19a-E308-1~9] 17.3 Layered materials

Thu. Sep 19, 2019 9:30 AM - 11:45 AM E308 (E308)

Toshifumi Irisawa(AIST)

11:30 AM - 11:45 AM

[19a-E308-9] Reduction of Contact Resistance between TiSi₂ and Sputtered-MoS₂ Films by FG anneal

〇Satoshi Igarashi¹, Yusuke Mochizuki¹, Haruki Tanigawa¹, Masaya Hamada¹, Kentaro Matsuura¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

Keywords:MoS2, silicide, contact

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Presentation information

[19a-E308-1~9] 17.3 Layered materials

[19a-E308-9] Reduction of Contact Resistance between TiSi2 and Sputtered-MoS2 Films by FG anneal

[19a-E308-9] Reduction of Contact Resistance between TiSi₂ and Sputtered-MoS₂ Films by FG anneal