The 80th JSAP Autumn Meeting 2019

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-E310-1~10] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2019 9:00 AM - 11:45 AM E310 (E310)

Motoaki Iwaya(Meijo Univ.), Hiroto Sekiguchi(Toyohashi Univ. of Tech.)

11:30 AM - 11:45 AM

[19a-E310-10] Response characteristics of AlGaN/GaInN/GaN HFET-type visible photosensors

〇(M1)Ryo Fujishima1, Megumi Sakata1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1,2 (1.Meijo Univ., 2.Akasaki Research Center,Nagoya Univ.)

Keywords:photosensors

In this presentation, we will report the results of photoresponse performance of GaInN/AlGaN/GaN HFET photosensors.