Experimental study on device processes of polar-plane-free faceted InGaN LEDs

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2019 9:00 AM - 11:45 AM E310 (E310)

Motoaki Iwaya(Meijo Univ.), Hiroto Sekiguchi(Toyohashi Univ. of Tech.)

10:45 AM - 11:00 AM

〇Yoshinobu Matsuda¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Keywords:nitride semiconductor, polychromatic emission, three dimensional structure