[19a-E310-1~10] 15.4 III-V-group nitride crystals

[19a-E310-9] Fabrication of High-Efficiency GaN Micro-LEDs by Using Neutral-Beam Etching

Jun Zhu¹, Tokio Takahashi¹, Kazuhiko Endo², Daisuke Ohori³, Seiji Samukawa^3,4,2, 〇Xue-Lun Wang^5,6,1 (1.ESPRIT, AIST, 2.NeRI, AIST, 3.IFS, Tohoku Univ., 4.AIMR, Tohoku Univ., 5.GaN-OIL, AIST, 6.IMaSS, Nagoya Univ.)

Keywords:micro LED, Neutral Beam Etching, GaN