[19a-E311-1~8] 6.3 Oxide electronics

[19a-E311-4] PDA effect on analog behavior of HfO₂ charge trap memory

〇Taiho Yoshinaka¹, Hisato Onishi¹, Yasuo Nara¹ (1.Univ. of Hyogo)

Keywords:analog memory, charge trap memory, flatband voltage

Development of analog memory is essential to realize a computer that acts like human brain and realizes high-speed processing with low power consumption. In this study, we focus on charge trap memory using HfO₂ as charge trap layer and aim to realize analog operation. When the PDA effect was examined, it was found that analog V_FB shift during pulse voltage application was well modeled and it was found that the high temperature PDA had a larger V_FB shift.