The 80th JSAP Autumn Meeting 2019

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[19a-E313-1~10] 15.5 Group IV crystals and alloys

Thu. Sep 19, 2019 9:30 AM - 12:00 PM E313 (E313)

Keisuke Arimoto(Univ. of Yamanashi)

11:45 AM - 12:00 PM

[19a-E313-10] Enhancement of Photoluminescence Intensity of Ge1−xSnx by Heavily Sb Doping

〇Masahiro Fukuda1, Jihee Jeon1, Mitsuo Sakashita1, Shigehisa Shibayama1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:semiconductor, GeSn