Formation of laterally content-graded n-type Si1−xGex wires using ion implantation

Masaya Nakata; Taiki Nishijima; Satoshi Shimizu; Isao Tsunoda; Motohiro Tomita; Takanobu Watanabe; Osamu Nakatsuka; Masashi Kurosawa

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[19a-E313-1~10] 15.5 Group IV crystals and alloys

Thu. Sep 19, 2019 9:30 AM - 12:00 PM E313 (E313)

Keisuke Arimoto(Univ. of Yamanashi)

11:30 AM - 11:45 AM

[19a-E313-9] Formation of laterally content-graded n-type Si₁₋_xGe_x wires using ion implantation

〇Masaya Nakata¹, Taiki Nishijima², Satoshi Shimizu², Isao Tsunoda², Motohiro Tomita³, Takanobu Watanabe³, Osamu Nakatsuka^1,4, Masashi Kurosawa^1,5 (1.Grad. Sch. of Eng., Nagoya Univ., 2.NIT, Kumamoto College, 3.Waseda Univ., 4.IMaSS, Nagoya Univ., 5.IAR, Nagoya Univ.)

Keywords:SiGe

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Presentation information

[19a-E313-1~10] 15.5 Group IV crystals and alloys

[19a-E313-9] Formation of laterally content-graded n-type Si1−xGex wires using ion implantation

[19a-E313-9] Formation of laterally content-graded n-type Si₁₋_xGe_x wires using ion implantation