The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[19a-E315-1~11] 13.9 Compound solar cells

Thu. Sep 19, 2019 9:15 AM - 12:15 PM E315 (E315)

Kunihko Tanaka(Nagaoka Univ. of Tech.), Yoji Akaki(Natl. Inst. of Tech.,Miyakonojo Col.)

10:45 AM - 11:00 AM

[19a-E315-6] Electronic structure of n-type SnS single crystal

ISSEI SUZUKI1, Sakiko Kawanishi1, Yuki Iguchi2, Koichi Sato2, Takahisa Omata1, Hiroshi Yanagi2 (1.Tohoku Univ., 2.Univ. of Yamanashi)

Keywords:SnS, Solar cell, XPS

SnS is expected as one of the new solar cell materials due to its band gap of 1.1 eV. Whereas SnS generally exhibits p-type conduction, n-type SnS which realizes homo p/n junction is inevitable to improve conversion efficiency. In this study, we analyzed the electronic structure of Cl-doped SnS single crystals, which we recently reported to exhibit n-type conduction, by XPS measurement. Br-doped SnS single crystal was also prepared and compared with Cl-doped one in the aspect of electrical property and electronic state.