[19a-E318-1~12] 【CS.7】 Code-sharing Session of 7.2 & 7.4 & 9.5

[19a-E318-10] Investigation of Non-Charging Exposure Condition in Electron Beam Lithography

〇Hideya Mizuno¹, Kento Kubo¹, Kentaro Kojima¹, Masatoshi Kotera¹ (1.OIT)

Keywords:Electron beam, Scanning electron microscope, Resist charging

In order to realize a high speed and large capacity semiconductor integrated circuit, it is necessary to further improve the electron beam (EB) drawing technology. At that time, charging at the time of EB exposure to a photomask becomes a problem. In this research, the surface potential at the time of electron beam exposure was measured without contact, and the non-charged state of the resist was searched. At the time of the presentation, we will explain in detail the global charge distribution created by fogging electrons and the conditions for making the local charge distribution just below the EB non-charged.