2019年第80回応用物理学会秋季学術講演会

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3 光・フォトニクス » 3.9 テラヘルツ全般

[19a-PA2-1~26] 3.9 テラヘルツ全般

2019年9月19日(木) 09:30 〜 11:30 PA2 (第一体育館)

09:30 〜 11:30

[19a-PA2-3] Enhanced THz emission of silicon nanowire-coated gallium arsenide photoconductive antenna

Neil Irvin Cabello1、Alexander De Los Reyes1、Joybelle Lopez1、Vladimir Sarmiento1、John Paul Ferrolino1、Maria Angela Faustino1、Victor DC Andres Vistro1、Clairecynth Yu1、Hannah Bardolaza1、Miezel Talara2、Masaki Shiihara2、Valynn Mag-usara2、Jessica Afalla2、Hideaki Kitahara2、Masahiko Tani2、Arnel Salvador1、Armando Somintac1、〇Elmer Surat Estacio1 (1.U.P. Diliman、2.Univ. of Fukui)

キーワード:terahertz, nanostructures, photoconductive antenna

We report on the enhancement of the THz emission from a GaAs photoconductive antenna (PCA) coated with silicon nanowires (SiNWs). The PCA was fabricated by patterning a 10 μm bowtie antenna on a semi-insulating GaAs. The SiNWs were fabricated using metal-assisted chemical etching and were applied onto the PCA using simple drop-cast method. The increased THz intensity was attributed to improved photoabsorption resulting from the application of the SiNWs.