[19a-PA4-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [19a-PA4-2] PEDOT: PSS/n-Si heterojunction solar cells with ALD-Al₂O₃/n-Si field effect inversion layer

〇(D)Md Enamul Karim¹, Tomofumi UKAI², A.T.M. Saiful ISLAM¹, Shunji KUROSU², Yasuhiko FUJII², Masahide TOKUDA², Tatsuro HANAJIRI², Ryo ISHIKAWA¹, Keiji UENO¹, Hajime SHIRAI¹ (1.Saitama University, 2.Toyo University)

Keywords:ALD-Al2O3, UV photo-lithography

In this paper, we present the termination of atomic-layer-deposited ALD-Al₂O₃ on c-Si by a UV photolithography process and the effect on the performance of PEDOT: PSS/n-Si solar cells. Since PEDOT: PSS is a transparent hole-conducting layer with higher Si passivation ability, the PEDOT: PSS/n-Si junction acts as a solar cell with no use of additional step. However, for further strengthen the electric field, passivation quality, improvement of the chemical stability of the interface, and the minimum of the contact area between Si and PEDOT: PSS is a possible candidate using a high-dielectric such as Al₂O₃. In this study, we present the effect of an inversion layer of ALD-Al₂O₃/n-Si on the passivation of n-Si and field effect at PEDOT: PSS/n-Si interface.