9:30 AM - 11:30 AM
▲ [19a-PA4-2] PEDOT: PSS/n-Si heterojunction solar cells with ALD-Al2O3/n-Si field effect inversion layer
Keywords:ALD-Al2O3, UV photo-lithography
In this paper, we present the termination of atomic-layer-deposited ALD-Al2O3 on c-Si by a UV photolithography process and the effect on the performance of PEDOT: PSS/n-Si solar cells. Since PEDOT: PSS is a transparent hole-conducting layer with higher Si passivation ability, the PEDOT: PSS/n-Si junction acts as a solar cell with no use of additional step. However, for further strengthen the electric field, passivation quality, improvement of the chemical stability of the interface, and the minimum of the contact area between Si and PEDOT: PSS is a possible candidate using a high-dielectric such as Al2O3. In this study, we present the effect of an inversion layer of ALD-Al2O3/n-Si on the passivation of n-Si and field effect at PEDOT: PSS/n-Si interface.