[19a-PA4-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [19a-PA4-6] Effect of annealing temperature on Al₂O₃/NAOS/Si MOS interface properties

〇(D)WEI FU¹, Xufang Zhang¹, Hiroshi Umishio¹, Aboulaye Traore¹, Hiroshi Yano¹, Takeaki Sakurai¹ (1.Univ. of Tsukuba)

Keywords:Si solar cells, interface passivation, Al2O3/NAOS combination layer

Aluminum oxide (Al2O3) and Silicon nitride (a-SiNx: H) provide an outstanding level of interface passivation on crystalline silicon. An ultrathin SiO2 layer formed by nitric acid oxidation of Si (NAOS) was used in combination with SiNx to improve the interfacial properties of Si solar cells. In order to understand the passivation properties of Al2O3/NAOS combination layer, in this work, we investigated the influence of post-annealing temperature on the interfacial properties at the Al2O3/NAOS/Si MOS structure.