[19a-PB3-1~25] 13.8 Optical properties and light-emitting devices

[19a-PB3-25] Reduction of the Silicon Surface Reflectance by Nano-Sized Laser Ablation Pits

Shunsuke Sakate¹, Satoki Suzuki¹, 〇Mitsunori Saito¹ (1.Ryukoku Univ.)

Keywords:Silicon surface, Optical transmittance, Laser ablation

A Si plate was irradiated with laser pulses to create ablation lines with a 600 nm width and a 2−4 μm period. Infrared spectral measurements revealed that high transmittance was attainable in the wavelength range beyond 6 μm if the polarization direction was perpendicular to the lines. Spectral peaks also appeared in the short wavelength range where the lines simultaneously induced a strong scattering. This phenomenon seemed to be caused by optical interference that was associated with the surface plasmon; i.e., theoretical calculation on the basis of the surface-wave interference yielded transmission spectra that were similar to the measured ones.