Oral presentation

[20a-E302-1~13] 13.8 Optical properties and light-emitting devices

Fri. Sep 20, 2019 9:00 AM - 12:15 PM E302 (E302)

Ariyuki Kato(Nagaoka Univ. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-E302-1] Effects of anode-side-CeO₂ layer on characteristics of DC-EL device.

〇Kunitoshi Yanagihara¹, Noboru Miura¹ (1.Meiji Univ.)

9:15 AM - 9:30 AM

[20a-E302-2] Low-voltage Luminescence of DC Inorganic Electroluminescent Device with Cu₂O.

〇Kunitoshi Yanagihara¹, Kenta Murakami¹, Noboru Miura¹ (1.Meiji Univ.)

9:30 AM - 9:45 AM

[20a-E302-3] Improvement of output power of 250 nm AlGaN UVC-LED by optimizing electron-blocking layer

〇(M1)Reiji Nakamura^1,2, Sachi Fujikawa³, Noritoshi Maeda¹, Satoshi Endo², Hiroki Fujishiro², Hideki Hirayama¹ (1.Riken, 2.Tokyo University of Science, 3.Tokyo Denki University)

9:45 AM - 10:00 AM

[20a-E302-4] GaN-based VCSELs with buried SiO2 waveguide and n-type AIInN/GaN DBR

〇(M2)Ryosuke Iida¹, Muranaga Wataru¹, Ueshima Yusuke¹, Iwayama Sho¹, Takeuchi Tetsuya¹, Kamiyama Satoshi¹, Iwaya Motoaki¹, Akasaki Isamu^1,2 (1.Meijo Univ., 2.Nagoya Univ.)

10:00 AM - 10:15 AM

[20a-E302-5] Nitride-based tunnel junction current confinement structures by Ar plasma irradiation toward VCSELs

〇Mahito Odawara¹, Ryota Fuwa¹, Kazuki Kiyohara¹, Syo Iwayama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satosi Kamiyama¹, Isao Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ)

10:15 AM - 10:30 AM

▲ [20a-E302-6] High-speed Double Transverse Coupled Cavity VCSELs

〇(D)Hameeda Ibrahim^1,2, Fumio Koyama¹, M Ahmed² (1.Tokyo Institute of Technology, 2.Minia University, Egypt)

10:30 AM - 10:45 AM

▲ [20a-E302-7] High power, high speed pulse generation of VCSEL amplifier

〇(D)Ahmed MohamedAhmed Hassan¹, M. Ahmed², M Nakahama, F Koyama (1.Tokyo tech., 2.El-Menia Univ.)

10:45 AM - 11:00 AM

[20a-E302-8] Modal analysis of the surface-emitting Mid-IR quantum cascade lasers

〇Rei Hashimoto¹, Okada Naotada¹, Kakuno Tsutomu¹, Yamamoto Yuichirou¹, Kaneko Kei¹, Saito Shinji¹, Sakoda Kazuaki² (1.Toshiba CMC, 2.NIMS)

11:00 AM - 11:15 AM

[20a-E302-9] Analysis of Heat Transfer structures for Quantum Cascade Lasers

〇Tsutomu Kakuno¹, Rei Hashimoto¹, Kei Kaneko¹, Shigeyuki Takagi², Shinji Saito¹ (1.Toshiba, 2.Tokyo Univ. of Tech.)

11:15 AM - 11:30 AM

[20a-E302-10] Analysis of gain and wave guide for surface-emitting quantum Cascade Lasers

〇Shinji Saito¹, Tsutomu Kakuno¹, Kei Kaneko¹, Rei Hashimoto¹, Yuichiro Yamamoto¹, Notada Okada¹, Kazuaki Sakoda² (1.Toshiba, 2.NIMS)

11:30 AM - 11:45 AM

[20a-E302-11] Polarization characteristics of THz emissions from Bi₂Te₃/Te striped structure excited by a femtosecond pulsed laser

〇Fumikazu Murakami¹, Kazunori Serita¹, Hiranaru Murakami¹, Rea Dalipi¹, A. Urbas², A. Materna³, M. Buza³, D. Pawlak³, Masayoshi Tonouchi¹, Iwao Kawayama¹ (1.ILE Osaka Univ., 2.AFRL, USA, 3.ITME, Poland)

11:45 AM - 12:00 PM

[20a-E302-12] Ultrafast Electron Dynamics in Photo-excited Germanium: Important Roles of Intervalley Scatterings in Energy- and Momentum-relaxation

〇Junichi Kanasaki¹, Isamu Yamamoto², Junpei Azuma², Susumu Fukatsu³, Jelena Sjakste⁴, Nathalie Vast⁴ (1.Osaka City Univ., 2.Saga Univ., 3.Univ. Tokyo, 4.Ecole Polytechnique)

12:00 PM - 12:15 PM

△ [20a-E302-13] Study on the precious measurement of the real part of the third-order nonlinear susceptibility tensor in InP thick film using Z-scan technique with elliptical polarization

〇Kinya Ohara¹, Soma Nishibe¹, Toshio Matsusue¹, Hiroyuki Bando¹ (1.Chiba Univ.)

Oral presentation

[20p-E302-1~17] 13.8 Optical properties and light-emitting devices

Fri. Sep 20, 2019 1:45 PM - 6:15 PM E302 (E302)

Yasushi Nanai(Aoyama Gakuin Univ.), Jun Tatebayashi(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[20p-E302-1] Investigation on Determination Factors of Photoluminescence Properties for Perovskite CsPb(Br_1−xI_x)₃ Nanocrystals

〇Shimpei Miyata¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:00 PM - 2:15 PM

△ [20p-E302-2] Self-Recovery Mechanism of Photodegraded Perovskite CsPbBr₃ Nanocrystals

〇Koji Kidokoro¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:15 PM - 2:30 PM

[20p-E302-3] Photostability of Composite Films Embedding Silica-Coated CsPbBr₃ Perovskite Nanocrystals

〇Kazuhiro Taki¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:30 PM - 2:45 PM

△ [20p-E302-4] Influence of Ligand on Thermal Stability of CsPbBr₃ Perovskite Nanocrystal Dispersions

〇Daichi Sato¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:45 PM - 3:00 PM

[20p-E302-5] Water treatment effect of photoluminescence efficiency of inorganic perovskite quantum dots and observation of intermediate process by transient absorption measurement

〇Koki Mori¹, Furube Akihiro¹, Shih-Hsuan Chen², Liang-Yih Chen² (1.Tokushima Univ., 2.NTUST)

3:00 PM - 3:15 PM

[20p-E302-6] Ligand Exchange of Core/Shell CuInS₂/ZnS Quantum Dots and Preparation of Their Ink

〇Momo Shiraishi¹, Yoshiki Iso¹, Tetsuhiko Isobe¹, Takehiro Seshimo², Yueh Chun Liao², Kunihiro Noda², Dai Shiota² (1.Keio Univ., 2.tok)

3:15 PM - 3:30 PM

[20p-E302-7] Application of Fluorescent Films of CuInS₂/ZnS Quantum Dots to Monocrystalline Silicon Modules

〇Yuto Nakamura¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

3:30 PM - 3:45 PM

[20p-E302-8] Synthesis and optical properties of Zn(Te_1-xSe_x) quantum dots using zinc acetate

〇Satoshi Tsukuda¹, Takahisa Omata¹ (1.IMRAM, Tohoku Univ.)

4:00 PM - 4:15 PM

[20p-E302-9] Time-resolved edge emission spectroscopy of InGaAs quantum dots by variable stripe length method

〇Akihisa Ohtake¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.Hokkaido Univ.)

4:15 PM - 4:30 PM

△ [20p-E302-10] Electron spin dynamics at excited states of p-doped InGaAs quantum dots

〇Shino Sato¹, Yuto Nakamura¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.Hokkaido Univ.)

4:30 PM - 4:45 PM

[20p-E302-11] PL mapping of exciton luminescence associated with defects in high density InAs-QD layers

〇Sho Tatsugi¹, Ryo Sugiyama¹, Koichi Yamaguchi¹ (1.Univ. of Electro-Comm.)

4:45 PM - 5:00 PM

△ [20p-E302-12] The mechanism of the enhanced anti-Stokes photoluminescence in (Y:Yb)AG at high temperature

〇(D)Yuta Nakayama¹, Yukihiro Harada¹, Takashi Kita¹ (1.Kobe Univ.)

5:00 PM - 5:15 PM

△ [20p-E302-13] Formation and optical characteristics of Eu-doped ZnO nanowires by sputtering-assisted MOCVD

〇Masao Mishina¹, Jun Tatebayshi¹, Tokuhito Nakajima¹, Shuhei Ichikawa¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

5:15 PM - 5:30 PM

[20p-E302-14] Observation of down-conversion behavior in ZnO:Tm,Yb/ZnO core-shell nanowires

〇Jun Tatebayashi¹, Tokuhito Nakajima¹, Masao Mishina¹, Dolf Timmerman¹, Shuhei Ichikawa¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

5:30 PM - 5:45 PM

△ [20p-E302-15] Transition-type dependence of modal gain in Eu-doped GaN epitaxial layer

〇Shogo Maeda¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

5:45 PM - 6:00 PM

▲ [20p-E302-16] Excitation dynamics and efficiency of luminescence of Eu in GaN

〇Dolf Timmerman¹, Masaaki Ashida¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

6:00 PM - 6:15 PM

△ [20p-E302-17] Study on the fabrication process of Er,O co-doped GaAs microdisks towards enhancement of the Q factor

〇Ryoma Higashi¹, Masayuki Ogawa¹, Jun Tatebayashi¹, Shuhei Ichikawa¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Oral presentation

[21a-E302-1~13] 13.8 Optical properties and light-emitting devices

Sat. Sep 21, 2019 9:00 AM - 12:15 PM E302 (E302)

Kenji Shinozaki(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-E302-1] White luminescence of Ba(Si,Al)₇(O,N)₁₀:Eu,Li

〇Takashi Takeda¹, Shiro Funabashi¹, Rong-Jun Xie², Naoto Hirosaki¹ (1.NIMS, 2.Xiamen Univ.)

9:15 AM - 9:30 AM

[21a-E302-2] Synthesis, crystal structure and photoluminescence of a new Sr-B-Al-Si nitride phosphor

〇Fumitaka Yoshimura¹, Hisanori Yamane² (1.Mitsubishi Chemical Corp., 2.IMRM, Tohoku Univ.)

9:30 AM - 9:45 AM

[21a-E302-3] Effect of cation atomic ratio on the photoluminescence properties of Eu²⁺-activated orthosilicate phosphors prepared by solution techniques

〇Yasushi Sato¹, Riko Yasuda¹, Koji Tomita², Toshihiro Okajima³, Masato Kakihana⁴ (1.Okayama Univ. Sci., 2.Tokai Univ., 3.SAGA-LS, 4.Tohoku Univ. IMRAM)

9:45 AM - 10:00 AM

[21a-E302-4] Structure analyses of orange-red emitting YAG:Ce phophors

〇Hitomi Nakamura¹, Katsuhiro Nomura¹, Akinori Hoshikawa², Kenji Shinozaki¹, Tomoko Akai¹ (1.AIST, 2.Ibaraki Univ.)

10:00 AM - 10:15 AM

[21a-E302-5] Ce³⁺: Y₃Al₅O₁₂ composite ceramic phosphors for blue LD-pumped lamp

〇Kenta Yagasaki¹, Kana Fujioka¹, Hiroshi Fuji¹, Hisashi Minemoto¹, Kazuhisa Yamamoto¹ (1.Osaka Univ.)

10:15 AM - 10:30 AM

[21a-E302-6] Luminescence properties of Eu doped strontium aluminate red phosphors

〇Masamori Ohgushi¹, Nakamura Toshihiro¹ (1.Hosei Univ.)

10:30 AM - 10:45 AM

[21a-E302-7] Eu concentration dependence of thermal and photo reduction for Eu ions in KSrPO₄and KBaPO₄

〇Masaya Tsuta¹, Susumu Nakamura², Ariyuki Kato¹ (1.Nagaoka Univ. of Tech., 2.NIT. Nagaoka College)

10:45 AM - 11:00 AM

△ [21a-E302-8] Characterization of ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺ ions in Y³⁺ sites with low and high symmetries in YSiO₂N

〇Yuuki Kitagawa¹, Jumpei Ueda¹, Setsuhisa Tanabe¹ (1.Kyoto Univ.)

11:00 AM - 11:15 AM

[21a-E302-9] Crystal structure and PL characteristics of LaInO₃: Eu³⁺ powder and epitaxial films

〇(P)Norihiro Oshime¹, Kazushige Ueda², Hiroshi Takashima¹ (1.AIST, 2.Kyushu Inst. Tech.)

11:15 AM - 11:30 AM

[21a-E302-10] Photoluminescence properties of Eu-doped layered oxychlorides AE₃Sc₂O₅Cl₂

〇Yuki Iwasa¹, Fumi Takada^1,2, Taichiro Nishio², Makoto Tatsuda³, Koji Kishio^3,1, Yoshihiro Tsujimoto⁴, Takayuki Yanagida⁵, Hiraku Ogino¹ (1.AIST, 2.Tokyo Univ. of Sci., 3.The Univ. of Tokyo, 4.NIMS, 5.NAIST)

11:30 AM - 11:45 AM

△ [21a-E302-11] Ultraviolet penetration depth determination of Ca_0.6Sr_0.4TiO₃:Pr³⁺ film by thickness dependence of photoluminescence intensity

〇(P)Norihiro Oshime¹, Hiroshi Takashima¹ (1.AIST)

11:45 AM - 12:00 PM

△ [21a-E302-12] Synthesis and characterization of Er/Yb doped YAlO₃ fluorescent fine powder

〇(M2)Hiroki Kawahara¹, Hiroaki Furuse¹, Kana Fujioka² (1.Kitami Inst. Tech., 2.Osaka Univ.)

12:00 PM - 12:15 PM

[21a-E302-13] Development of Pr³⁺-doped oxyfluoride glass phosphor for NIR wideband light-source

〇(D)Seiya Nishimura¹, Yasushi Nanai¹, Shinji Koh¹, Shingo Fuchi¹ (1.Aoyama Gakuin Univ.)

Poster presentation

[19a-PB3-1~25] 13.8 Optical properties and light-emitting devices

Thu. Sep 19, 2019 9:30 AM - 11:30 AM PB3 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[19a-PB3-1] Optical detection of defect levels in α-SiAlON phosphors.

〇Yuya Tanaka¹, Norihiko Kamata¹ (1.Saitama Univ.)

9:30 AM - 11:30 AM

[19a-PB3-2] Radiative and Non-Radiative Transitions in SrAl₂O₄:Eu,Dy long afterglow phosphors

〇Naoko Arie¹, Koyu Oota¹, Yuto Hori¹, Haruki Fukada¹, Atsushi Yamaguchi¹ (1.KIT)

9:30 AM - 11:30 AM

[19a-PB3-3] Fluorescence characteristics of hydrothermally synthesized Na₃Al₂(PO₄)₂F₃ wity activator

〇Haruki Ukita¹, Mari Yasuda¹, Hiroaki Samata¹ (1.Kobe Univ.)

9:30 AM - 11:30 AM

[19a-PB3-4] Effects of firing conditions on NIR broad luminescence of Cr³⁺, Cr⁴⁺-codoped Mg₂SiO₄

〇(M2)Ryota Ishida¹, Yuki Urabe¹, Seiya Nishimura¹, Yasushi Nanai¹, Shingo Fuchi¹ (1.Aoyama Gakuin Univ.)

9:30 AM - 11:30 AM

[19a-PB3-5] Reduced resistance of TiO₂:Sm:Nb using as light emitting layer

〇(M1)Kenji Sato¹, Guan Sujun¹, Zhao Xinwei¹, Komuro Syuji² (1.Tokyo univ sci., 2.Toyo Univ.)

9:30 AM - 11:30 AM

[19a-PB3-6] Improvement of solar cell characteristics by addition of ZnSe/ZnS:Mn/ZnS quantum dots as wavelength conversion materials

〇Hisaaki Nishimura¹, Takaya Maekawa¹, Tomomi Takagi², Susumu Sobue², Syouichi Kawai², Jyun Hasegawa², DaeGwi Kim¹ (1.Osaka City Univ., 2.DENSO CORPORATION)

9:30 AM - 11:30 AM

[19a-PB3-7] Photoluminescence excitation spectra of AlN films co-doped with Si and Eu

〇(M1)Hayato Kasuya¹, Kazusa Morimoto¹, Kazuya Iwade¹, Hiroshi Katumata¹ (1.Meiji Univ.)

9:30 AM - 11:30 AM

[19a-PB3-8] Photoluminescence properties of P-doped β-FeSi₂ films

〇Kensuke Akiyama^1,2, Sakiko Nojima¹, Ryo Takahashi¹, Hiroshi Funakubo² (1.Kanagawa Inst. Ind. Sci. Tech., 2.Tokyo Inst. Tech.)

9:30 AM - 11:30 AM

[19a-PB3-9] Effects of Si and C additive amount and post-annealing temperature on the optical properties of amorphous and nanocrystalline SiC embedded in silicon oxide films

〇(M2)Rei Narimatsu¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

9:30 AM - 11:30 AM

[19a-PB3-10] Role of Pr³⁺ ions as a recombination center for electroluminescence of Ca_0.6Sr_0.4Ti_0.9Al_0.1O_3-_d :Pr thin films

〇Toru Kyomen¹, Hiroshi Takashima² (1.Gunma Univ., 2.AIST)

9:30 AM - 11:30 AM

[19a-PB3-11] Powder-type inorganic EL devices with P(VDF/TrFE) thin film dispersed BaTiO₃ nanoparticles

〇Tomoki Yokota^1,2, Nagasawa Kohei^1,2, Satou Ayumu^1,2, Nakamura Yuta^1,2, Arai Kimihiro^1,2, Fukada Haruki^1,2, Yamaguchi Atsushi^1,2 (1.Kanazawa Institute of Technology, 2.O. E. D. S. R&D Center)

9:30 AM - 11:30 AM

[19a-PB3-12] Long wavelength emission from citric acid derived carbon-nanocomposite phosphors
and addition effect of amines

〇Shunya Ogawa¹, Daisuke Ihochi¹, Ariyuki Kato¹ (1.Nagaoka Univ. of Tech.)

9:30 AM - 11:30 AM

[19a-PB3-13] Influence of Dispersion Mediums on Photoluminescence Properties of Phenylenediamine-Derived Carbon Dots

〇Rina Sato¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

9:30 AM - 11:30 AM

[19a-PB3-14] Influence of Surface Modification of p-Phenylenediamine-Derived Carbon Dots on Photoluminescence Properties

〇Kohei Sato¹, Rina Sato¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

9:30 AM - 11:30 AM

[19a-PB3-15] Improvement of the surface roughness of molybdenum trioxide
and core-shell quantum dot thin films

〇Yu Kamada¹, Naoki Ohtani¹ (1.Doshisha Univ.)

9:30 AM - 11:30 AM

[19a-PB3-16] Optical properties of the solution-processed blue-emitting Cs₃Cu₂I₅ thin films

〇Shoichi Sano¹, Takashi Nagase^1,2, Takashi Kobayashi^1,2, Hiroyoshi Naito^1,2 (1.Osaka Pref. Univ., 2.RIMED)

9:30 AM - 11:30 AM

[19a-PB3-17] Photoluminescence dynamics of densely packed CuInS2 nanoparticle films

〇(M2)Satoshi Okuyama¹, Rin Yokoi¹, Yasushi Hamanaka¹, Toshihiro Kuzuya² (1.Nagoya Inst. Tech., 2.Muroran Inst. Tech.)

9:30 AM - 11:30 AM

[19a-PB3-18] Low Temperature Photoluminescence Spectroscopy of
CuInS₂Nanoparticles Dispersed in Polymer Films

〇(M1)Rin Yokoi¹, Satoshi Okuyama¹, Yasushi Hamanaka¹, Toshihiro Kuzuya² (1.Nagoya Inst.Tech., 2.Muroran Inst.Tech.)

9:30 AM - 11:30 AM

[19a-PB3-19] Exciton Spin Dynamics in CH₃NH₃PbBr₃ Single Crystal

〇Nanako Igarashi¹, Shunichi Sakaguchi¹, Naoki Yukiue¹, Kenichi Oto¹, Yoshihiko Kanemitsu², Yasuhiro Yamada¹ (1.Chiba Univ., 2.Kyoto Univ.)

9:30 AM - 11:30 AM

[19a-PB3-20] Fabrication and Optical Characterization of CdSe Nanoplatelets in a microcavity

〇Takuya Hosokawa¹, Kenta Nagaki¹, Masaru Oda¹, Hisao Kondo² (1.Kyusyu Inst. of Tech., 2.Ehime Univ.)

9:30 AM - 11:30 AM

[19a-PB3-21] Dielectric function spectra and optical transitions of TlBr crystals for radiation detectors

〇Ryota Kitano¹, YongGu Shim¹, Kazuki Wakita², Nazim Mamedov³, Masato Ishikawa⁴, Toshiyuki Onodera⁵, Tadayoshi Shoji⁵, Katsumi Mochizuki⁵ (1.Osaka Prefecture Univ., 2.Chiba Institute of Tech., 3.Azerbaijan National Academy of Sciences, 4.Chiba Univ., 5.Tohoku Institute of Tech.)

9:30 AM - 11:30 AM

[19a-PB3-22] Dielectric Function Spectra and Optical Transitions In TlBr crystal

〇(M2)Nao Takahashi¹, Yuto Yasui¹, Kazuki Wakita¹, YongGu Sim², Nazim Mamedov³, Makoto Ishikawa⁴, Toshiyuki Onodera⁵, Tadayoshi Shoji⁵, Katsumi Mochizuki⁵ (1.Chiba Inst., 2.Osaka prefecture Univ., 3.Azerbaijan National Academy of Sciences, 4.Chiba Univ., 5.Tohoku Inst.)

9:30 AM - 11:30 AM

[19a-PB3-23] Femtosecond time-resolved spectroscopy in rare earth oxide thin films

〇Takuji Yamade¹, Taku Yamamoto², Daichi Oka², Kenichi Kaminaga², Tomoteru Fukumura², Teuto Kanai³, Nobuhisa Ishii³, Jiro Itatani³, Takayuki Makino¹ (1.Univ. of Fukui, 2.Tohoku Univ, 3.Univ. Tokyo)

9:30 AM - 11:30 AM

[19a-PB3-24] Fabrication process of near-infrared wavelength quantum cascade laser using CaF₂/Si heterostructures

〇(M2)Gensai Tei¹, Long Liu¹, Yohei Koyanagi¹, Masahiro Watanabe¹ (1.Tokyo Tech)

9:30 AM - 11:30 AM

[19a-PB3-25] Reduction of the Silicon Surface Reflectance by Nano-Sized Laser Ablation Pits

Shunsuke Sakate¹, Satoki Suzuki¹, 〇Mitsunori Saito¹ (1.Ryukoku Univ.)

Sessions

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[20a-E302-1~13] 13.8 Optical properties and light-emitting devices

▲ [20a-E302-6] High-speed Double Transverse Coupled Cavity VCSELs

▲ [20a-E302-7] High power, high speed pulse generation of VCSEL amplifier

△ [20a-E302-13] Study on the precious measurement of the real part of the third-order nonlinear susceptibility tensor in InP thick film using Z-scan technique with elliptical polarization

[20p-E302-1~17] 13.8 Optical properties and light-emitting devices

△ [20p-E302-2] Self-Recovery Mechanism of Photodegraded Perovskite CsPbBr3 Nanocrystals

△ [20p-E302-4] Influence of Ligand on Thermal Stability of CsPbBr3 Perovskite Nanocrystal Dispersions

△ [20p-E302-10] Electron spin dynamics at excited states of p-doped InGaAs quantum dots

△ [20p-E302-12] The mechanism of the enhanced anti-Stokes photoluminescence in (Y:Yb)AG at high temperature

△ [20p-E302-13] Formation and optical characteristics of Eu-doped ZnO nanowires by sputtering-assisted MOCVD

△ [20p-E302-15] Transition-type dependence of modal gain in Eu-doped GaN epitaxial layer

▲ [20p-E302-16] Excitation dynamics and efficiency of luminescence of Eu in GaN

△ [20p-E302-17] Study on the fabrication process of Er,O co-doped GaAs microdisks towards enhancement of the Q factor

[21a-E302-1~13] 13.8 Optical properties and light-emitting devices

△ [21a-E302-8] Characterization of 5D0→7F2 electric dipole transition of Eu3+ ions in Y3+ sites with low and high symmetries in YSiO2N

△ [21a-E302-11] Ultraviolet penetration depth determination of Ca0.6Sr0.4TiO3:Pr3+ film by thickness dependence of photoluminescence intensity

△ [21a-E302-12] Synthesis and characterization of Er/Yb doped YAlO3 fluorescent fine powder

[19a-PB3-1~25] 13.8 Optical properties and light-emitting devices

Authentication

△ [20p-E302-2] Self-Recovery Mechanism of Photodegraded Perovskite CsPbBr₃ Nanocrystals

△ [20p-E302-4] Influence of Ligand on Thermal Stability of CsPbBr₃ Perovskite Nanocrystal Dispersions

△ [21a-E302-8] Characterization of ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺ ions in Y³⁺ sites with low and high symmetries in YSiO₂N

△ [21a-E302-11] Ultraviolet penetration depth determination of Ca_0.6Sr_0.4TiO₃:Pr³⁺ film by thickness dependence of photoluminescence intensity

△ [21a-E302-12] Synthesis and characterization of Er/Yb doped YAlO₃ fluorescent fine powder