The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[21a-E302-1~13] 13.8 Optical properties and light-emitting devices

Sat. Sep 21, 2019 9:00 AM - 12:15 PM E302 (E302)

Kenji Shinozaki(AIST)

9:30 AM - 9:45 AM

[21a-E302-3] Effect of cation atomic ratio on the photoluminescence properties of Eu2+-activated orthosilicate phosphors prepared by solution techniques

Yasushi Sato1, Riko Yasuda1, Koji Tomita2, Toshihiro Okajima3, Masato Kakihana4 (1.Okayama Univ. Sci., 2.Tokai Univ., 3.SAGA-LS, 4.Tohoku Univ. IMRAM)

Keywords:phosphor, photoluminescence

Orthosilicates [M2SiO4 (M = Ba, Sr, Ca)] with high Eu2+ concentrations show the strong green, orange and red emissions under blue light region. It is expected that aqueous solution process leads to the synthesis of high-pure phosphors with excellent photoluminescence (PL) properties. In this study, Eu2+-activated M2SiO4 (M = Ba, Sr, Ca) phosphors were prepared by amorphous metal complex (AMC) method using propylene glycol modified silane (PGMS) as Si source and the relationship between PL properties and Si concentration in these phosphors was investigated in detail. PL properties of Eu2+-activated M2SiO4 (M = Ba, Sr, Ca) phosphors were sensitively changed by nominal Si concentration. Especially, PL intensity of the phosphors with nominal Si concentration at higher than chemical stoichiometric composition (1.00) were drastically deteriorated. These results indicate that PL properties of these phosphors are strongly affected by nominal Si concentration.