5:30 PM - 5:45 PM
△ [20p-E302-15] Transition-type dependence of modal gain in Eu-doped GaN epitaxial layer
Keywords:gain, Eu, GaN
Presentation information
Oral presentation
13 Semiconductors » 13.8 Optical properties and light-emitting devices
[20p-E302-1~17] 13.8 Optical properties and light-emitting devices
Fri. Sep 20, 2019 1:45 PM - 6:15 PM E302 (E302)
Yasushi Nanai(Aoyama Gakuin Univ.), Jun Tatebayashi(Osaka Univ.)