Shogo Maeda

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 1:45 PM - 6:15 PM E302 (E302)

Oral presentation
| 13 Semiconductors
| 13.8 Optical properties and light-emitting devices

[20p-E302-1~17] 13.8 Optical properties and light-emitting devices

5:30 PM - 5:45 PM

△ [20p-E302-15] Transition-type dependence of modal gain in Eu-doped GaN epitaxial layer

〇Shogo Maeda¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)