The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[21a-E302-1~13] 13.8 Optical properties and light-emitting devices

Sat. Sep 21, 2019 9:00 AM - 12:15 PM E302 (E302)

Kenji Shinozaki(AIST)

11:00 AM - 11:15 AM

[21a-E302-9] Crystal structure and PL characteristics of LaInO3: Eu3+ powder and epitaxial films

〇(P)Norihiro Oshime1, Kazushige Ueda2, Hiroshi Takashima1 (1.AIST, 2.Kyushu Inst. Tech.)

Keywords:oxide phosphor, semiconductor

強い赤橙色PLを示す新規蛍光体LaInO3:Eu3+について,緻密で平坦性の優れた高品質な薄膜を得るために,その作製条件とPL特性を調べたので報告する。