[20a-E302-1~13] 13.8 Optical properties and light-emitting devices

[20a-E302-3] Improvement of output power of 250 nm AlGaN UVC-LED by optimizing electron-blocking layer

〇(M1)Reiji Nakamura^1,2, Sachi Fujikawa³, Noritoshi Maeda¹, Satoshi Endo², Hiroki Fujishiro², Hideki Hirayama¹ (1.Riken, 2.Tokyo University of Science, 3.Tokyo Denki University)

Keywords:semiconductor, electron-blocking layer, AlGaN UVC-LED