The 80th JSAP Autumn Meeting 2019

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19a-PB5-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 19, 2019 9:30 AM - 11:30 AM PB5 (PB)

9:30 AM - 11:30 AM

[19a-PB5-15] High-temperature crystallization in droplet epitaxial growth of InAs quantum dot on InP(111)A

Takaaki Mano1, Neul Ha1, Takashi Kuroda1, Takeshi Noda1, Yoshiki Sakuma1, Kazuaki Sakoda1 (1.NIMS)

Keywords:Quantum dot, Droplet epitaxy, Molecular beam epitaxy

We are investigating the formation of highly-symmetric InAs QDs on InP(111)A substrates by droplet epitaxy for the application of entangled photon emitters at telecom wavelengths. In order to improve the quality of InAs QDs, we introduced high-temperature crystallization process. We found that InAs QDs can be formed by crystallization of In droplets at 350oC.