[19a-PB5-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [19a-PB5-4] The Influence of Annealing Temperature to Evaluation of Electrical Characteristics of GaAsN Films with Intentional Change of N Distribution by Atomic Layer Epitaxy

〇Ryo Minematsu¹, Masahiro Kawano¹, Tomohiro Haraguchi¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

Keywords:GaAsN, ALE, Hall Effect