[19p-B01-1~6] Power Electronics and Technology of Thin Films - Surfaces. For realization of low energy consumption society

[19p-B01-4] Preparation Status for Practical Use of GaN Power Devices

〇Atsushi Tanaka^1,2, Yuto Ando³, Masahiro Takahashi³, Fumiya Miura³, Seiya Kawasaki³, Hirotaka Watanabe¹, Maki Kushimoto³, Manato Deki¹, Shugo Nitta¹, Yoshio Honda¹, Hiroshi Amano^1,2,4,5 (1.Nagoya Univ. IMaSS, 2.NIMS, 3.Dept. of Electronics, Nagoya Univ, 4.Nagoya Univ. ARC, 5.NU VBL)

Keywords:gallium nitride, power divece

n recent years, the quality of the GaN free-standing substrate is being improved, and research on power devices using GaN on GaN is also active. We are also engaged in research from crystal growth to processing, crystal evaluation, processes, device evaluation and so on. In this talk, we introduce our approach to GaN power devices such as slice and dislocation observation of GaN substrate, formation of p-type by ion implantation, device characteristics in each plane orientation.