[19p-B01-1~6] Power Electronics and Technology of Thin Films - Surfaces. For realization of low energy consumption society

[19p-B01-6] Development of SiC power device and its application to the power electronics system

〇Tatsuo Oomori¹ (1.Mitsubishi Electric Corp.)

Keywords:SiC power device, Power electronics

3.3kV-SiC-MOSFET including reliability such as SOA and long-term stability was realized with development of device structure using JFET doping and advanced epi process. Applied to a railway vehicle thrust control system, it achieved about 30% energy saving and about 65% volume reduction as compared to the Si device. 6.5kV-SiC-MOSFET with embedded SBD was also developed to overcome bipolar degradation and realized an inverter circuit with a chip area about 1/2 of the conventional one. And HVDC converter application are also presented.