[19p-B31-1~8] New development of surface and interface evaluation methods for thin films

[19p-B31-5] Optical Characterization of Nitride-semiconductor-based Nano-structures
by Scanning Near-field Optical Microscopy

〇Yoichi Kawakami Kawakami¹ (1.Kyoto Univ.)

Keywords:scanning near-field optical microscopy, GaN-based semiconductors, luminescence dynamics

Scanning near-field optical microscopy is a versatile tool to characterize the optical properties of nano-structures in GaN-based semiconductors. In this symposium, I will describe the principle, the instrumentation and experimental results of multi-mode SNOM, where the photoluminescence spectra are mapped under illumination, illumination-collection and collection modes.