[19p-C309-1~16] 13.6 ナノ構造・量子現象・ナノ量子デバイス

▼ [19p-C309-3] Analysis of Radiative and Non-radiative Recombination in Multiple Quantum Well by Low-temperature Photoluminescence and Time-resolved Photoluminescence

〇(P)WARAKORN YANWACHIRAKUL¹、Tetsuya Nakamura^1,2、Kentaroh Watanabe¹、Yoshiaki Nakano¹、Masakazu Sugiyama¹ (1.Univ. of Tokyo、2.JAXA)

キーワード：multiple quantum well, recombination, photoluminescence

Radiative and non-radiative recombination in multiple quantum wells (MQW) were characterized by the combination of photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements under low temperature. The samples of 10, 20 and 30-period of MQW were grown by metal-organic chemical vapor-phase deposition (MOCVD). Both sides of MQW layer were covered by InGaP barrier in order to prevent carriers’ thermal escape. The samples were measured by PL and TRPL with the 784-nm excitation which selectively excites the MQW under the temperature of 7-300 K. The integrated PL intensity was saturated at the lowest temperature of 7 K where all carriers were assumed to recombine via only radiative pathway. The dependence of normalized PL intensity versus temperature showed rather complicated dependency on the period of MQWs, indicating that several factors are included such as degradation of in crystal quality with increasing MQW periods and re-absorption of emitted photons in the MQWs. The TRPL curves exhibited multiple components and their behavior was dependent on the periods of MQWs, also suggesting the participation of multiple processes.