[19p-E206-1~19] 3.15 Silicon photonics

▲ [19p-E206-4] Toward high modulation efficiency of III-V/Si hybrid MOS optical phase shifter by equivalent oxide thickness scaling

〇(DC)Qiang Li¹, Jae-Hoon Han¹, Tsung-En Lee¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.Univ. of Tokyo)

Keywords:optical phase shifter, optical modulator, optical switch

A high modulation efficiency is desirable for both optical modulators and optical switches which are fundamental building blocks for optical interconnection systems. By integrating III-V materials on a Si waveguide to form a III-V/Si hybrid metal-oxide-semiconductor (MOS) capacitor via wafer-bonding technology, efficient and low-loss optical phase modulation has been achieved. The modulation efficiency V_pL of a III-V/Si hybrid MOS capacitor is proportional to the oxide capacitance which is determined by the equivalent oxide thickness (EOT). In this study, we presented a III-V/Si hybrid MOS capacitor with a thin capacitance equivalent thickness (CET) as small as 3.5 nm by employing HfO₂/Al₂O₃ stack for wafer bonding to enhance the modulation efficiency of the III-V/Si hybrid MOS optical phase shifter.