[19p-E305-1~15] 13.3 Insulator technology

[19p-E305-1] Evaluation of the density of thermal oxide films on SiC(000-1)

〇Satoru Iioka¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

Keywords:semiconductor, SiC, oxide film

In the thermal oxide film on a SiC substrate, there is a concern about the influence of carbon impurities generated in the formation process on the electrical characteristics. Not only in the vicinity of the interface but also in the oxide film, defects may be generated. Therefore, we evaluated the film density of the thermal oxide film in the film thickness direction distribution and investigated the correlation with the electrical characteristics. When comparing the results of Si and SiC, SiC has a low density region in a region slightly away from the interface unlike Si. It is considered that this is because the carbon cluster is detached from the oxide film by the oxidation reaction and a void is formed in the film.