4:45 PM - 5:00 PM
[19p-E305-12] Introduction of Hf-Post Metallization Annealing at GeO2/Ge interface
Keywords:MOS structure, Post Metallization Annealing, Ge
Oral presentation
13 Semiconductors » 13.3 Insulator technology
Thu. Sep 19, 2019 1:45 PM - 5:45 PM E305 (E305)
Toshifumi Irisawa(AIST), Kiyoteru Kobayashi(Tokai Univ.)
4:45 PM - 5:00 PM
Keywords:MOS structure, Post Metallization Annealing, Ge