[19p-E307-1~15] 9.4 熱電変換

▼ [19p-E307-5] Thermal stability analysis and thermoelectric properties of supersaturated solid-solution of Silicon-Germanium-Phosphorous

〇(PC)Swapnil Chetan Ghodke¹、Muthusamy Omprakash¹、Kevin Delime Codrin¹、Masahiro Adachi³、Yoshiyuki Yamamoto³、Tsunehiro Takeuchi^1,2 (1.Toyota Technological Institute、2.PRESTO, Japan Science and Technology Agency、3.Sumitomo Electric Industries)

キーワード：Silicon germanium, nanostructures, thermal stability

A very large magnitude of the figure of merit ZT > 1.9 [1] was achieved in Si-Ge-P alloys at 873 K with the combination of (a) constructive modification in the electronic structure through impurity substitution and (b) a very low thermal conductivity through nanostructuring. The prepared alloys were supersaturated solid-solution of silicon, germanium and phosphorous which shows a phase separation above 923 K. It is essential for a compound to maintain structural stability at elevated operating temperatures for thousands thermal cycles in device applications. Thus, the objective of this work is to investigate the effect of thermal cycles on the thermal degradation or modification in structural, microstructural, and transport properties.