The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[19p-E308-1~13] 17.3 Layered materials

Thu. Sep 19, 2019 1:15 PM - 4:45 PM E308 (E308)

Masaki Tanemura(Nagoya Inst. of Tech.), Takayuki Arie(Osaka Pref. Univ.)

4:30 PM - 4:45 PM

[19p-E308-13] Growth of Monolayer Hexagonal Boron Nitride Single-Crystals on Graphite by Chemical Vapor Deposition

Hayato Arai1, Taiki Inoue1, Rong Xiang1, Shohei Chiashi1, Shigeo Maruyama1,2 (1.Univ. of Tokyo, 2.AIST)

Keywords:h-BN, graphene, Chemical Vapor Deposition

Graphene, h-BN, and heterostructure of these materials has been promising for its excellent properties as nanoelectronics material. Generally these materials are grown on metal catalyst. To use these materials as electric devices, wet transfer process is required. This process has been reported to degrade the properties. Therefore, we successfully grew h-BN on graphite wihout using metal catalyst.