Analysis of efficiency curves in AlGaN-based multiple quantum wells using rate equation based on radiative and nonradiative recombination of excitons (2)

Hideaki Murotani; Hiroyuki Miyoshi; Ryohei Takeda; Hiroki Nakao; Satoshi Kurai; M. A. Khan; Noritoshi Maeda; Masafumi Jo; Hideaki Hirayama; Yoichi Yamada

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-E310-1~20] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2019 1:15 PM - 7:00 PM E310 (E310)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Ryota Ishii(Kyoto Univ.)

4:00 PM - 4:15 PM

[19p-E310-10] Analysis of efficiency curves in AlGaN-based multiple quantum wells using rate equation based on radiative and nonradiative recombination of excitons (2)

〇Hideaki Murotani¹, Hiroyuki Miyoshi², Ryohei Takeda², Hiroki Nakao², Satoshi Kurai², M. A. Khan³, Noritoshi Maeda³, Masafumi Jo³, Hideaki Hirayama³, Yoichi Yamada² (1.NIT, Tokuyama Coll., 2.Yamaguchi Univ., 3.RIKEN)

Keywords:AlGaN, exciton, internal quantum efficiency