Analysis of efficiency curves in AlGaN-based multiple quantum wells using rate equation based on radiative and nonradiative recombination of excitons

Hiroyuki Miyoshi; Ryohei Takeda; Hiroki Nakao; Satoshi Kurai; Hideaki Murotani; M.Ajimal Khan; Noritoshi Maeda; Masafumi Jo; Hideki Hirayama; Yoichi Yamada

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-E310-1~20] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2019 1:15 PM - 7:00 PM E310 (E310)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Ryota Ishii(Kyoto Univ.)

3:45 PM - 4:00 PM

[19p-E310-9] Analysis of efficiency curves in AlGaN-based multiple quantum wells using rate equation based on radiative and nonradiative recombination of excitons

〇Hiroyuki Miyoshi¹, Ryohei Takeda¹, Hiroki Nakao¹, Satoshi Kurai¹, Hideaki Murotani², M.Ajimal Khan³, Noritoshi Maeda³, Masafumi Jo³, Hideki Hirayama³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.RIKEN)

Keywords:AlGaN, Exciton, IQE

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